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2SC5624
Silicon NPN Epitaxial High Frequency Low Noise Amplifier
REJ03G0129-0300 Rev.3.00 Feb.21.2005
Features
* High gain bandwidth product fT = 28 GHz typ. * High power gain and low noise figure; PG = 18 dB typ., NF = 1.2 dB typ. at f = 1.8 GHz
Outline
RENESAS Package code: PTSP0004ZA-A 2 (Package name: CMPAK-4)
3 1 4
1. Emitter 2. Collector 3. Emitter 4. Base
Note:
Marking is "VH-".
Absolute Maximum Ratings
(Ta = 25C)
Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature Note: Value on PCB (40 x 40 x 1.0mm) Symbol VCBO VCEO VEBO IC Pc Tj Tstg Ratings 10 3.5 0.8 35 100 150 -55 to +150 Unit V V V mA mW C C
Rev.3.00, Feb.21.2005, page 1 of 6
2SC5624
Electrical Characteristics
(Ta = 25C)
Item Collector cutoff current Collector cutoff current Emitter cutoff current DC current transfer ratio Collector output capacitance Gain bandwidth product Power gain Noise figure Symbol ICBO ICEO IEBO hFE Cob fT PG NF Min -- -- -- 80 -- 25 14 -- Typ -- -- -- 120 0.3 28 18 1.2 Max 1 1 10 160 0.6 -- -- 1.6 Unit A A A pF GHz dB dB Test Conditions VCB = 8 V, IE = 0 VCE = 3 V, RBE = VEB = 0.8 V, IC = 0 VCE = 2 V, IC = 20 mA VCB = 2 V, IE = 0, f = 1 MHz VCE = 2 V, IC = 30 mA, f = 2 GHz VCE = 2 V, IC = 30 mA, f = 1.8 GHz VCE = 2 V, IC = 5 mA, f = 1.8 GHz
Main Characteristics
Maximum Collector Dissipation Curve DC Current Transfer Ratio vs. Collector Current VCE = 2 V
Pc (mW)
200
200
Collector Power Dissipation
DC Current Transfer Ratio
50 100 150 Ta (C) 200
150
hFE
100 100 50 0 0 1 Ambient Temperature 50 10 20 2 5 Collector Current IC (mA) 100
Rev.3.00, Feb.21.2005, page 2 of 6
2SC5624
Collector Output Capacitance vs. Collector to Base Voltage
IE = 0 f = 1 MHz
(pF)
1.0
50
Gain Bandwidth Product vs. Collector Current
fT (GHz)
Cob
0.8
40 VCE = 2 V
Collector Output Capacitance
Gain Bandwidth Product
5 VCB (V) 10
0.6
30 20
0.4
0.2
10
0 0.5 2 0.1 0.2 1 Collector to Base Voltage
0 1 10 20 2 5 50 Collector Current IC (mA) 100
Power Gain vs. Collector Current 20 f = 1.8 GHz 16 VCE = 2 V 5
Noise Figure vs. Collector Current VCE = 2 V
PG (dB)
12
NF (dB)
4
f = 1.8 GHz
3
Power Gain
8
Noise Figure
2 5 10 20 50 100
2
4
1
0 1
0 1 2 5 10 20 50 100 Collector Current IC (mA) Collector Current IC (mA)
20
S21 Parameter vs. Collector Current f = 2 GHz VCE = 2 V
|S21|2 (dB) S21 Parameter
16
12
8
4
0 1 2 5 10 20 50 IC (mA) 100 Collector Current
Rev.3.00, Feb.21.2005, page 3 of 6
2SC5624
S11 Parameter vs. Frequency
.8 .6 .4 3 .2 4 5 10 0 .2 .4 .6 .8 1 1.5 2 3 45 10 -10 -.2 -5 -4 -3 -.4 -.6 -.8 -1 -1.5 -2 -120 -90 180 0 150 30 1 1.5 2
S21 Parameter vs. Frequency
90 120
Scale: 12 / div.
60
-150
-30
-60
Condition ; VCE = 2 V, IC = 30 mA 100 to 3000 MHz (100 MHz step)
Condition ; VCE = 2 V, IC = 30 mA 100 to 3000 MHz (100 MHz step)
S12 Parameter vs. Frequency
90 120
S22 Parameter vs. Frequency
.8 .6 .4 3 1 1.5 2
Scale: 0.02 / div.
60
150
30 .2
4 5 10
180
0
0
.2
.4
.6 .8 1
1.5 2
3 45
10 -10
-.2 -150 -30 -.4 -120 -60 -90 -.6 -.8 -1 -1.5 -2
-5 -4 -3
Condition ; VCE = 2 V, IC = 30 mA 100 to 3000 MHz (100 MHz step)
Condition ; VCE = 2 V, IC = 30 mA 100 to 3000 MHz (100 MHz step)
Rev.3.00, Feb.21.2005, page 4 of 6
2SC5624
S Parameter
(VCE = 2 V, IC = 30 mA, Zo = 50 )
S11 f (MHz) 100 200 300 400 500 600 700 800 900 1000 1100 1200 1300 1400 1500 1600 1700 1800 1900 2000 2100 2200 2300 2400 2500 2600 2700 2800 2900 3000 MAG 0.445 0.447 0.439 0.432 0.424 0.414 0.407 0.398 0.390 0.386 0.381 0.377 0.371 0.370 0.367 0.368 0.370 0.360 0.365 0.365 0.362 0.372 0.370 0.372 0.378 0.370 0.382 0.388 0.387 0.388 ANG -27.3 -54.4 -78.7 -98.8 -112.8 -124.3 -133.4 -141.5 -147.9 -154.1 -159.0 -164.0 -167.8 -171.8 -175.7 -178.8 178.0 174.7 172.0 168.9 166.8 164.1 160.9 159.0 156.6 154.5 152.2 150.7 147.6 146.9 MAG 46.66 42.27 36.16 30.59 25.84 22.15 19.22 16.94 15.05 13.63 12.45 11.48 10.60 9.84 9.23 8.66 8.16 7.72 7.33 6.95 6.66 6.35 6.08 5.86 5.64 5.42 5.24 5.03 4.86 4.72 S21 ANG 163.5 147.1 133.0 122.2 114.5 108.9 104.4 100.8 97.7 95.3 93.3 91.3 89.6 87.7 86.1 84.7 83.4 82.2 80.8 79.4 78.2 77.0 75.6 74.6 73.5 72.3 71.3 70.3 69.0 67.9 MAG 0.0055 0.0115 0.0165 0.0207 0.0246 0.0277 0.0307 0.0335 0.0372 0.0398 0.0420 0.0452 0.0480 0.0509 0.0535 0.0567 0.0595 0.0623 0.0651 0.0682 0.0709 0.0737 0.0764 0.0795 0.0824 0.0848 0.0874 0.0906 0.0928 0.0964 S12 ANG 83.8 78.6 73.6 68.8 67.1 66.1 65.0 65.3 64.4 65.1 65.2 65.0 64.5 64.7 64.3 64.1 64.4 64.3 64.0 63.8 63.1 63.0 62.3 62.3 62.0 61.6 61.7 60.7 61.0 59.7 MAG 0.904 0.846 0.750 0.650 0.561 0.487 0.426 0.376 0.335 0.301 0.273 0.250 0.229 0.213 0.197 0.186 0.173 0.164 0.156 0.148 0.142 0.135 0.130 0.125 0.121 0.117 0.113 0.109 0.105 0.102 S22 ANG -12.9 -26.8 -39.3 -48.8 -55.9 -61.4 -65.3 -68.6 -70.7 -72.5 -73.7 -74.5 -74.9 -75.1 -75.2 -74.7 -74.7 -74.0 -73.6 -72.7 -72.0 -71.3 -70.8 -69.9 -68.7 -68.5 -67.1 -66.8 -65.7 -65.5
Rev.3.00, Feb.21.2005, page 5 of 6
2SC5624
Package Dimensions
JEITA Package Code SC-82A RENESAS Code PTSP0004ZA-A Package Name CMPAK-4(T) / CMPAK-4(T)V MASS[Typ.] 0.006g
D e2 b1 B B e
A Q c
E
HE LP L
Reference Symbol Dimension in Millimeters
A xM
A S A b
L1
A3 e2 e
A2
A
l1
yS b b2 c c1 c A-A Section
A1 S b1 b3 c1 l1
b5
e1
A A1 A2 A3 b b1 b2 b3 c c1 D E e e2 HE L L1 LP x y b4 b5 e1 l1 Q
Min 0.8 0 0.8 0.25 0.35
Nom
0.1 1.8 1.15
1.8 0.3 0.1 0.2
0.9 0.25 0.32 0.42 0.3 0.4 0.13 0.11 2.0 1.25 0.65 0.6 2.1
Max 1.1 0.1 1.0 0.4 0.5
0.15 2.2 1.35
b4 B-B Section Pattern of terminal position areas
2.4 0.7 0.5 0.6 0.05 0.05 0.45 0.55 0.9
1.5 0.2
Ordering Information
Part Name 2SC5624VH-TL-E 3000 pcs. Quantity Shipping Container 178 Reel, 8 mm Taping
Note: Therefore especially small contact area of terminal, miss contact may occur if inadequate soldering condition is applied. Contact Renesas sales office for any question regarding recommended soldering condition of Renesas.
Rev.3.00, Feb.21.2005, page 6 of 6
Sales Strategic Planning Div.
Keep safety first in your circuit designs!
Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap. Notes regarding these materials 1. These materials are intended as a reference to assist our customers in the selection of the Renesas Technology Corp. product best suited to the customer's application; they do not convey any license under any intellectual property rights, or any other rights, belonging to Renesas Technology Corp. or a third party. 2. Renesas Technology Corp. assumes no responsibility for any damage, or infringement of any third-party's rights, originating in the use of any product data, diagrams, charts, programs, algorithms, or circuit application examples contained in these materials. 3. All information contained in these materials, including product data, diagrams, charts, programs and algorithms represents information on products at the time of publication of these materials, and are subject to change by Renesas Technology Corp. without notice due to product improvements or other reasons. It is therefore recommended that customers contact Renesas Technology Corp. or an authorized Renesas Technology Corp. product distributor for the latest product information before purchasing a product listed herein. The information described here may contain technical inaccuracies or typographical errors. Renesas Technology Corp. assumes no responsibility for any damage, liability, or other loss rising from these inaccuracies or errors. Please also pay attention to information published by Renesas Technology Corp. by various means, including the Renesas Technology Corp. Semiconductor home page (http://www.renesas.com). 4. When using any or all of the information contained in these materials, including product data, diagrams, charts, programs, and algorithms, please be sure to evaluate all information as a total system before making a final decision on the applicability of the information and products. Renesas Technology Corp. assumes no responsibility for any damage, liability or other loss resulting from the information contained herein. 5. Renesas Technology Corp. semiconductors are not designed or manufactured for use in a device or system that is used under circumstances in which human life is potentially at stake. Please contact Renesas Technology Corp. or an authorized Renesas Technology Corp. product distributor when considering the use of a product contained herein for any specific purposes, such as apparatus or systems for transportation, vehicular, medical, aerospace, nuclear, or undersea repeater use. 6. The prior written approval of Renesas Technology Corp. is necessary to reprint or reproduce in whole or in part these materials. 7. If these products or technologies are subject to the Japanese export control restrictions, they must be exported under a license from the Japanese government and cannot be imported into a country other than the approved destination. Any diversion or reexport contrary to the export control laws and regulations of Japan and/or the country of destination is prohibited. 8. Please contact Renesas Technology Corp. for further details on these materials or the products contained therein.
RENESAS SALES OFFICES
Refer to "http://www.renesas.com/en/network" for the latest and detailed information. Renesas Technology America, Inc. 450 Holger Way, San Jose, CA 95134-1368, U.S.A Tel: <1> (408) 382-7500, Fax: <1> (408) 382-7501 Renesas Technology Europe Limited Dukes Meadow, Millboard Road, Bourne End, Buckinghamshire, SL8 5FH, U.K. Tel: <44> (1628) 585-100, Fax: <44> (1628) 585-900 Renesas Technology Hong Kong Ltd. 7th Floor, North Tower, World Finance Centre, Harbour City, 1 Canton Road, Tsimshatsui, Kowloon, Hong Kong Tel: <852> 2265-6688, Fax: <852> 2730-6071 Renesas Technology Taiwan Co., Ltd. 10th Floor, No.99, Fushing North Road, Taipei, Taiwan Tel: <886> (2) 2715-2888, Fax: <886> (2) 2713-2999 Renesas Technology (Shanghai) Co., Ltd. Unit2607 Ruijing Building, No.205 Maoming Road (S), Shanghai 200020, China Tel: <86> (21) 6472-1001, Fax: <86> (21) 6415-2952 Renesas Technology Singapore Pte. Ltd. 1 Harbour Front Avenue, #06-10, Keppel Bay Tower, Singapore 098632 Tel: <65> 6213-0200, Fax: <65> 6278-8001
http://www.renesas.com
(c) 2005. Renesas Technology Corp., All rights reserved. Printed in Japan.
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